ELEKTRONENTRANSPORT IN TELLUR = TRANSPORT DES ELECTRONS DANS LE TELLUREHOERSTEL W.1978; WISSENSCH. Z. HUMBOLDT-UNIV. BERLIN, MATH.-NATURWISSENSCH. REIHE; DDR; DA. 1978; VOL. 27; NO 5; PP. 599-605; ABS. RUS/ENG/FRE; BIBL. 26 REF.Article

ZUR ELEKTRISCHEN WIRKSAMKEIT VON IOD IM HALBLEITER TELLUR. = EFFICACITE ELECTRIQUE DE L'IODE DANS LE TELLURE SEMICONDUCTEURHOERSTEL W.1978; Z. PHYS. CHEM., LEIPZIG; DTSCH.; DA. 1978; VOL. 259; NO 3; PP. 545-550; ABS. ANGL.; BIBL. 16 REF.Article

ELECTRIC FIELD DEPENDENCE OF THE ELECTRON MOBILITY IN TELLURIUM AT 77 K.BEHRENDT H; HOERSTEL W.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 83; NO 1; PP. 223-228; ABS. ALLEM.; BIBL. 20 REF.Article

KOAXIALER SCHALTER MIT KLEINER ANSTIEGSZEIT UND WEITEM SCHALTSPANNUNGSBEREICH. = COMMUTATEUR COAXIAL AVEC TEMPS DE MONTEE COURT ET DOMAINE DE TENSION DE COMMUTATION ETENDUHOERSTEL W.1976; EXPER. TECH. PHYS.; DTSCH.; DA. 1976; VOL. 24; NO 4; PP. 405-408; ABS. ANGL.; BIBL. 4 REF.Article

ZUR ELEKTRISCHEN WIRKUNG EINIGER FREMDSTOFFE DER GRUPPEN I BIS IV IM TELLUR. = EFFET SUR LES PROPRIETES ELECTRIQUES DES IMPURETES DES GROUPES I A IV DANS LE TELLUREHOERSTEL W.1974; Z. PHYS. CHEM., LEIPZIG; DTSCH.; DA. 1974; VOL. 255; NO 2; PP. 405-411; ABS. ANGL.; BIBL. 18 REF.Article

HALL EFFECT IN P-TELLURIUM AT HIGH ELECTRIC FIELDS.BOHMEYER W; HOERSTEL W.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. K27-K30; BIBL. 9 REF.Article

EFFECTS OF A SECOND VALENCE BAND AND RESONANT STATES ON TRANSPORT IN UNDOPED PB_1-XSN_XTEHOERSTEL W; HERRMANN KH.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 61; NO 2; PP. 425-433; ABS. GER; BIBL. 23 REF.Article

HIGH-FIELD HALL EFFECT IN EXTRINSIC AND INTRINSIC TELLURIUM AT ROOM TEMPERATURE.BOHMEYER W; HOERSTEL W.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 2; PP. 489-494; ABS. ALLEM.; BIBL. 11 REF.Article

DETERMINATION OF THE IMPACT IONIZATION RATE OF HOLES IN TELLURIUM AT 77 KDOBROVOLSKIS Z; HOERSTEL W; KROTKUS A et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 1; PP. 197-202; ABS. GER; BIBL. 21 REF.Article

TRANSPORT PROPERTIES OF IMPERFECT TELLURIUM CRYSTALS.AUTH J; HOERSTEL W; SPITZER M et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 2; PP. 483-488; ABS. ALLEM.; BIBL. 22 REF.Article

NEGATIVE DIFFERENTIAL CONDUCTIVITY AT HIGH ELECTRIC FIELDS IN INTRINSIC TELLURIUMBALYNAS V; DOBROVOLSKIS Z; HOERSTEL W et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 1; PP. K9-K11; BIBL. 7 REF.Article

Doping profile influence on HgCdTe diode characteristicsHEUKENKAMP, H; HOERSTEL, W.Physica status solidi. A. Applied research. 1991, Vol 123, Num 1, pp K7-K11, issn 0031-8965Article

Trap tunneling in HgCdTe n⁺-p junctions fabricated by ion implantationHEUKENKAMP, H; HOERSTEL, W.Physica status solidi. A. Applied research. 1990, Vol 120, Num 2, pp 485-496, issn 0031-8965Article

Density of trap tunnelling states in diffused PbS_1-xSe_x p-n junctionsHOERSTEL, W; OTTO, T.Physica status solidi. A. Applied research. 1986, Vol 95, Num 1, pp 361-366, issn 0031-8965Article

Elektrische Doppelimpulsmethode zur Messung der Minoritätsträgerlebensdauer, des Injektionsgrades und anderer Parameter in unsymmetrischen pn-Übergängen = Méthode électrique à deux impulsions pour mesurer la durée de vie des porteurs minoritaires, la vitesse d'injection et d'autres paramètres dans des jonctions pn non symétriques = Double pulse method for measuring the lifetime of minority carriers, the injection rate and other parameters of unsymmetric pn jonctionsNGUYEN VAN VUONG; HOERSTEL, W.Experimentelle Technik der Physik. 1983, Vol 31, Num 6, pp 465-481, issn 0014-4924Article

THE EFFECT OF HYDROSTATIC PRESSURE ON THE ANOMALOUS SIGN REVERSAL OF THE HALL COEFFICIENT IN TELLURIUMBALYNAS V; DOBROVOLSKIS Z; HOERSTEL W et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. K115-K117; BIBL. 7 REF.Article

The influence of hydrostatic pressure on the I-U-characterisitc of Pb_1-xSn_xTe diodesHOERSTEL, W; KRAAK, W; RUDOLPH, A. F et al.Physica status solidi. A. Applied research. 1983, Vol 80, Num 2, pp K193-K197, issn 0031-8965Article

Defect-induced conduction anomalies in n-type Hg_1-xCd_xTeHOERSTEL, W; KLIMAKOV, A; KRAMER, R et al.Physica status solidi. A. Applied research. 1990, Vol 119, Num 2, pp 589-594, issn 0031-8965, 6 p.Article

2D channel transport of metal-insulator semiconductor field effect transistors on narrow-gap Hg_1-xCd_xTe (0.2<x≤0.3)JAEGER, A; HOERSTEL, W; THIEDE, M et al.Semiconductor science and technology. 1994, Vol 9, Num 1, pp 54-60, issn 0268-1242Article

Growth, structural, and electrical investigation of self-assembled InAs quantum wires on (0 0 1)InPWALTHER, C; HOERSTEL, W; NIEHUS, H et al.Journal of crystal growth. 2000, Vol 209, Num 4, pp 572-580, issn 0022-0248Article

Excitonic magnetoluminescence enhancement in semimagnetic Hg_1-x-yCd_xMn_yTeMAZUR, YU. I; TARASOV, G. G; JÄHNKE, V et al.Semiconductor science and technology. 1996, Vol 11, Num 9, pp 1291-1301, issn 0268-1242Article

Optical and photoelectrical properties of Hg_0.6Cd_0.4TeHERRMANN, K. H; HOERSTEL, W; MÖLLMANN, K.-P et al.Semiconductor science and technology. 1992, Vol 7, Num 4, pp 578-582, issn 0268-1242Article

Peculiarities of the exchange interaction in narrow-gap Hg_1-x-yCd_xMn_ySeHOERSTEL, W; KRAAK, W; MASSELINK, W. T et al.Semiconductor science and technology. 1999, Vol 14, Num 9, pp 820-828, issn 0268-1242Article

Exchange interaction effect on oscillatory magnetoresistance in n-type Hg_1-x-yCd_xMn_yTe near semimetal-semiconductor transitionHOERSTEL, W; KRAAK, W; MASSELINK, W. T et al.Semiconductor science and technology. 2000, Vol 15, Num 12, pp 1119-1124, issn 0268-1242Article

Optical absorption and photoluminescence of narrow-gap Hg_1-x-yCd_xMn_ySe single crystalsMAZUR, YU. I; TARASOV, G. G; LAVORIK, S. R et al.Physica status solidi. B. Basic research. 1996, Vol 195, Num 2, pp 595-609, issn 0370-1972Article